2N3906 2N3906 pnp si-epitaxial-planar switching transistors si-epitaxial-planar schalttransistoren pnp version 2006-09-12 dimensions - ma?e [mm] power dissipation verlustleistung 625 mw plastic case kunststoffgeh?use to-92 (10d3) weight approx. ? gewicht ca. 0.18 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging taped in ammo pack standard lieferform gegurtet in ammo-pack maximum ratings (t a = 25c) grenzwerte (t a = 25c) 2N3906 collector-emitter-volt. ? kollektor-emitter-spannung b open - v ceo 40 v collector-base-voltage ? kollektor-basis-spannung e open - v cbo 40 v emitter-base-voltage ? emitter-basis-spannung c open - v ebo 5 v power dissipation ? verlustleistung p tot 625 mw 1 ) collector current ? kollektorstrom (dc) - i c 200 ma junction temperature ? sperrschichttemperatur storage temperature ? lagerungstemperatur t j t s -55...+150c -55?+150c characteristics (t j = 25c) kennwerte (t j = 25c) min. typ. max. dc current gain ? kollektor-basis-stromverh?ltnis 2 ) - i c = 0.1 ma, - v ce = 1 v - i c = 1 ma, - v ce = 1 v - i c = 10 ma, - v ce = 1 v - i c = 50 ma, - v ce = 1 v - i c = 100 ma, - v ce = 1 v h fe h fe h fe h fe h fe 60 80 100 60 30 ? ? ? ? ? ? ? 300 ? ? collector-emitter saturation voltage ? kollektor-emitter-s?ttigungsspg. 2 ) - i c = 10 ma, - i b = 1 ma - i c = 50 ma, - i b = 5 ma - v cesat - v cesat ? ? ? ? 0.25 v 0.40 v base-emitter saturation voltage ? basis-emitter-s?ttigungsspannung 2 ) - i c = 10 ma, - i b = 1 ma - i c = 50 ma, - i b = 5 ma - v besat - v besat 0.65 v ? ? ? 0.85 v 0.95 v 1 mounted on p.c. board with 3 mm 2 copper pad at each terminal montage auf leiterplatte mit 3 mm 2 kupferbelag (l?tpad) an jedem anschluss 2 tested with pulses t p = 300 s, duty cycle 2% ? gemessen mit impulsen t p = 300 s, schaltverh?ltnis 2% ? diotec semiconductor ag http://www.diotec.com/ 1 16 18 9 2 x 2.54 c be
2N3906 characteristics (t j = 25c) kennwerte (t j = 25c) min. typ. max. collector-emitter cutoff current ? kollektor-emitter-reststrom - v ce = 30 v, - v eb = 3 v - i cbx ? ? 50 na emitter-base cutoff current ? emitter-basis-reststrom - v ce = 30 v, - v eb = 3 v - i ebv ? ?- 50 na gain-bandwidth product ? transitfrequenz - i c = 10 ma, - v ce = 20 v, f = 100 mhz f t 250 mhz ? ? collector-base capacitance ? kollektor-basis-kapazit?t - v cb = 5 v, i e = i e = 0, f = 1 mhz c cbo ? ? 4.5 pf emitter-base capacitance ? emitter-basis-kapazit?t - v eb = 0.5 v, i c = i c = 0, f = 1 mhz c ebo ? ? 10 pf noise figure ? rauschzahl - v ce = 5 v, - i c = 100 a, r g = 1 k ? , f = 1 khz f ? ? 4 db switching times ? schaltzeiten (between 10% and 90% levels) delay time rise time - v cc = 3 v, - v be = 0.5 v - i c = 10 ma, - i b1 = 1ma t d ? ? 35 ns t r ? ? 35 ns storage time fall time - v cc = 3 v, - i c = 10 ma, - i b1 = - i b2 = 1 ma t s ? ? 225 ns t f ? ? 75 ns thermal resistance junction to ambient air w?rmewiderstand sperrschicht ? umgebende luft r tha < 200 k/w 1 ) recommended complementary npn transistors empfohlene komplement?re npn-transistoren 2n3904 1 mounted on p.c. board with 3 mm 2 copper pad at each terminal montage auf leiterplatte mit 3 mm 2 kupferbelag (l?tpad) an jedem anschluss 2 http://www.diotec.com/ ? diotec semiconductor ag
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